Epson S1C33210 Manual de usuario Pagina 110

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APPENDIX A <REFERENCE> EXTERNAL DEVICE INTERFACE TIMINGS
A-96 EPSON S1C33210 PRODUCT PART
A.2 DRAM (60ns)
DRAM interface setup examples 60ns
Operating
frequency
RAS precharge
cycle
RAS cycle CAS cycle
Refresh RAS pulse
width
Refresh RPC delay
20MHz11221
25MHz21221
33MHz22231
DRAM interface timing – 60ns
DRAM interface Unit: ns 33MHz 25MHz 20MHz
Parameter Symbol Min. Max. Cycle Time Cycle Time Cycle Time
<Common parameters>
Random read/random write cycle time tRC 110 6 180 5 200 4 200
#RAS precharge time tRP 40 260 280 150
#RAS pulse width tRAS 60 10000 4 120 3 120 3 150
#CAS pulse width tCAS 15 10000 1.5 45 1.5 60 1.5 75
Row address setup time tASR 0 0.5 15 0.5 20 0.5 25
Row address hold time tRAH 10 1.5 45 0.5 20 0.5 25
Column address setup time tASC 0 0.5 15 0.5 20 0.5 25
#RAS#CAS delay time tRCD 20 2.0 60 1.0 40 1.0 50
#RAScolumn address delay time tRAD 15 1.5 45 0.5 20 0.5 25
<Read-cycle parameters>
#RAS access time tRAC 60 3.5 105 2.5 100 2.5 125
#CAS access time tCAC 15 1.5 45 1.5 60 1.5 75
Address access time tAA 30 2.0 60 2.0 80 2.0 100
#OE access time tOAC 15 3.5 105 2.5 100 2.5 125
Output buffer turn-off time tOFF 0 15 2 60 2 80 1 50
<Write-cycle parameters>
Data input hold time tDH 10 1.5 45 1.5 60 1.5 75
<Fast-page mode>
Fast-page mode cycle time tPC 40 2.0 60 2.0 80 2.0 100
Fast-page mode #CAS precharge time tCP 10 0.5 15 0.5 20 0.5 25
Access time after #CAS precharge tACP 35 2.0 60 2.0 80 2.0 100
<Refresh cycle>
#CAS setup time tCSR 10 1.0 30 1.0 40 1.0 50
#CAS hold time tCHR 10 2.5 75 1.5 60 1.5 75
#RAS precharge#CAS hold time tPPC 10 1.0 30 1.0 40 1.0 50
#RAS pulse width (only in refresh cycle) tRAS 60 10000 3.0 90 2.0 80 2.0 100
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