
LI
SOmH
CI
.022yF
DI
C2 NI91
1000
pF
SI
R4
4.7K
02
R2
IOK
VI
R3
RS
20K
4.7K
BI
9V
C3
1000
p1<
S2
/'
OUTPUT
82
0
SD
E
81
01
Q2
Fig.
3. With
the
addition of a
MOSFET,
only
positive
-going
pulses
from
Q1
are
used. Phase
splitting
then
provides
a
repetition
rate
of
400
pps of either polarity.
PARTS
LIST
B1 -9
-volt
transistor battery
C1-
0.022 -µF, 109
-voll illylar capacitor
C2, C3-1000-pi;
silver -mica or polystyrene ca-
pacitor
1.1- 1.A'191 diode
1,1
50ml1,
high
-Q
inductor,
powdered
-iron
Core
01-
UniJunetio,
transistor !Texas Instruments
type 7 1S43
Q2- MOSFET
transistor
(Motorola
type
:11PF157 *)
R 1-
56,000 -ohm
R2- 10,000 -ohm,
All
resistors
1/3- 20.000
-ohm ,A-watt
R4,
R5-
4700
-olio,
SI- s.p.s.t. switch
52- -s.p.d.t.
switch
*Available
from
Robert .1. Glassman.
29
Hamp-
ton Rd.. Massapequa, X.I'. 11758.
$1.30
each,
postpaid.
ly
at
B2. Other
than this,
ringing
is
negligible.
For
the component
values
giv-
en,
pulse
amplitudes are approximately
equal.
Because the
inductor is
effectively
in
parallel
with
the output,
differentia-
tion
occurs,
with the result that
both of
the
output
pulses are quite narrow. The
simple
arrangement of two diodes and a
s.p.d.t.
switch
makes it possible
to have
either
positive
or negative
pulses at the
output.
Performance
with this
circuit is quite
good
provided
it is not
too heavily load-
ed. (That
is, it should
preferably
be used
with a
fairly
high- impedance
load.)
If
resistors R2 and
R3
are sufficiently
high
in value, and
loading is very
light,
the
amplitude
of
the output
pulse can
ap-
proach the level of the power-
supply po-
tential.
In the
circuit shown in Fig.
3,
only
the
positive -going
pulses
from B2
of
Q1
are used since MOSFET Q2 is
an n -chan-
nel
type.
Negative pulses
are suppressed
by diode D1. The
type MPF157
MOSFET
was chosen
for the phase
splitter
be-
cause
of its
ability to
handle
the signal
level
and its excellent
high-
frequency
re-
sponse, rather than
because
of
its high
input impedance. The latter
does permit
loading
of the UJT almost entirely
with
resistors, however.
With this circuit,
differentiation
oc-
curs
in the C2
-R2 circuit as well as in
Li. Repetition rate is
about
400
pulses
per second, while pulse duration is
about
12 /sec and output
amplitude
is
3 volts.
Amplitudes
of the positive and negative
pulses
are
equal.
When
working with
any
MOSFET,
take
care that you
do
not
touch the
isolated
gate
lead
since any static charge can
de-
stroy the fine gate insulation
within the
semiconductor.
Keep
the three
leads in
direct electrical contact
until the
MOS-
FET
is
soldered into
the circuit.
If a slower pulse rate is
desired, in-
crease the value of
either
RI
or
Cl,
in small steps,
until the desired rate is
obtained.
April, 1969
35
Comentarios a estos manuales